Novel Perspective Approach to Improve Performance of Nanowire TFET

Abstract

A Nanowire TFET device employing a Dual Metal Gate along with a combination of lower energy band gap III- V material for the source and Doping Pockets around the SC- junction to boost On-current is proposed. Gaussian Doping is exploited on the Drain side suppressing the ambi-polar and off-state currents. The proposed device (DMG DP GaSb-Si NWTFET) is judged against a vanilla Silicon Nanowire TFET (Si- NWTFET). Both these TFET devices are analyzed for their DC and Analog Characteristics. The modified device exhibits a much superior ON-current, OFF-current and Subthreshold Slope (SS) along with improvements in trans-conductance (gm), parasitic capacitance, Cutoff frequency (fT), transmit time (td) and the Gain-Bandwidth Product. The improved device is optimized for gate metal workfunctions and Pocket Doping Concentrations. The device is proposed as a suitable replacement to CMOS for low power applications.