A 2V Organic Complementary Inverter

S. De Vusser, S. Steudel, K. Myny, Jan Genoe, P. Heremans
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引用次数: 11

Abstract

A complementary organic thin-film transistor technology uses pentacene and F16CuPc as the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum deposition through an integrated shadow mask, while tilting the substrate. Organic complementary inverters are realized that display an almost ideal inverter curve at a supply voltage of 2V, showing a gain of 14 and a noise margin of 0.65V
2V有机互补逆变器
互补的有机薄膜晶体管技术分别使用并五苯和F16CuPc作为p型和n型材料。在倾斜衬底的同时,通过集成阴影掩膜真空沉积半导体图案化。实现了有机互补逆变器在电源电压为2V时显示出几乎理想的逆变器曲线,增益为14,噪声裕度为0.65V
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