Advances of the development of a ferroelectric field-effect transistor on Ge(001)

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI:10.1109/ICICDT.2017.7993524

P. Ponath, A. Posadas, Yuan Ren, Xiaoyu Wu, K. Lai, A. Demkov, Michael Schmidt, R. Duffy, P. Hurley, Jian Wang, C. Young, R. Vasudevan, M. Okatan, S. Jesse, Sergei V. Kalinin

引用次数: 0

Abstract

Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.

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Ge(001)基铁电场效应晶体管的研制进展

本文报道了Ge(001)的铁电场效应的最新进展。我们将通过在Ge上切换外延c轴取向BaTiO3中的铁电极化，来演示Ge(001)衬底中的载流子密度调制。BaTiO3图像化在器件应用和Pt/BTO/Ge异质结构电性能方面的最新成果将被讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 IEEE International Conference on IC Design and Technology (ICICDT)

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