{"title":"1200V FS-IGBT module with enhanced dynamic clamping capability","authors":"M. Otsuki, Y. Onozawa, S. Yoshiwatari, Y. Seki","doi":"10.1109/WCT.2004.240147","DOIUrl":null,"url":null,"abstract":"This paper describes the design concept to realize IGBT modules with large surge capability without any protection, such as gate controlled soft-turn-off and/or gate clamping zeners, especially focused on the large capacity fast switching FS (field-stop) IGBT modules. A 1200 V 450 A trench FS-IGBT module, which is designed to have optimum clamping voltage, has been able to obtain 6 /spl mu/sec-long UIS clamping turn off capability from two times larger current than its rating. Furthermore, the device survived after a 10 /spl mu/sec short-circuit followed by 2.5 /spl mu/sec clamping.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.240147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
This paper describes the design concept to realize IGBT modules with large surge capability without any protection, such as gate controlled soft-turn-off and/or gate clamping zeners, especially focused on the large capacity fast switching FS (field-stop) IGBT modules. A 1200 V 450 A trench FS-IGBT module, which is designed to have optimum clamping voltage, has been able to obtain 6 /spl mu/sec-long UIS clamping turn off capability from two times larger current than its rating. Furthermore, the device survived after a 10 /spl mu/sec short-circuit followed by 2.5 /spl mu/sec clamping.