A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI:10.1109/ICICDT.2017.7993514

K. Ishibashi, Junya Kikuchi, N. Sugii

引用次数: 3

Abstract

A 910nW 46fJ/conv 0.036mm2 delta sigma modulator is demonstrated. The chip was fabricated using 65nm SOTB (Silicon on Thin Buried oxide) technology, in which 13.4pJ/cycle 0.14uA Sleep Current CPU with 15nA VBB generator was obtained, resulting in achieving ultra-low power mixed signal IC for IoT applications.

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采用65nm SOTB技术的910nW δ σ调制器，用于物联网应用的混合信号IC

演示了一种910nW 46fJ/conv 0.036mm2 δ σ调制器。该芯片采用65nm SOTB (Silicon on Thin Buried oxide)工艺制作，获得13.4pJ/cycle 0.14uA休眠电流CPU和15nA VBB发生器，实现了物联网应用的超低功耗混合信号IC。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 IEEE International Conference on IC Design and Technology (ICICDT)

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