Characterization of optically controlled ion implanted in1-gaxas MESFET with buried gate

Abstract

Optoelectronic is one of the thrust areas for the recent research activity. One of the key components of the optoelectronic family is photo detector to be widely used in broadband communication, optical computing, optical transformer, optical control etc. Present paper includes the investigation carried on the basis of the mathematical modeling of InGaAs-MESFET with buried gate dark and the illuminated condition. Device is assumed to have the Gaussian doping profile. Investigation shows d. c. I-V characteristic can be influenced greatly in presence of illumination. It also shows that the drain conduction and the transconductance are also the function of optical power. Result shows that the device has better performance than the front gate. Present device is expected to emerge for the potential application such as optical demodulators for optical communication, optical switch, optical transducer, etc. with enhance performance with respect to the top gate MESFET.