High-Power Frequency Multiplied Sources

Abstract

This paper describes the recent results obtained from high-power frequency multiplied sources typically using integrated GaAs Schottky diode circuits. The results show that a single GaAs circuit can safely handle 500 mW input power, while generating more than 150 mW in a power-combined configuration for a doubler and about 25 mW for a tripler. The discussion will mainly focus on millimeter-wave frequency doublers and triplers between 160 and 345 GHz.