Low Inductive Platform for Long- and Short-term Dynamic Charaterization of SiC MOSFETs

Abstract

State-of-the art Silicon Carbide Power MOS-FETs switch at unprecedented speed. Therefore, special attention must be paid to the circuit design of dynamic characterization setups. Only if parasitic layout inductances are minimal, the electrical behavior during switching tran-sients is dominated by the MOSFET characteristics, fast switching is compatible with low overshoot and ringing, and measurement data constitutes reliable characterization data. This paper presents a low inductive test platform for devices in a TO-247-3 housing. The test platform contains measurement terminals for high bandwidth measurement of both current and voltage. The experiments presented in this paper prove that high-fidelity dynamic characterization data can be obtained from Double-Pulse Tests (DPTs) using the presented test platform. Equally accurate measurements can be obtained in long-term tests and under both hard- and soft-switching conditions.