Takenori Kakutani, Yuya Suzuki, Muhammad Ali, Serhat Erdogan, M. Kathaperumal, M. Swaminathan
{"title":"Reliability and High-Frequency Filter Characteristics of a Low-Loss Material for 5G RF Modules","authors":"Takenori Kakutani, Yuya Suzuki, Muhammad Ali, Serhat Erdogan, M. Kathaperumal, M. Swaminathan","doi":"10.1109/ISSM51728.2020.9377527","DOIUrl":null,"url":null,"abstract":"With the tremendous advances and increasing demand in 5G communications, the low-loss performance of RF device components becomes more critical. Two parameters that have significant impact on the low-loss RF performance are lower circuit conductor loss and dielectric loss of the build-up materials. Therefore, this study is focused on the loss tangent (Df) of the dielectric build-up material and demonstration of its electrical reliability with a low-loss substrate for high-frequency transmission. This newly developed advanced low-loss dry film build-up material exhibits a Dfvalues of < 0.003 at 39 GHz and is applicable to high frequency transmission. This build-up material also exhibits excellent electrical reliability required for advanced dielectric materials. For evaluation of the filter characteristics in the mm Wave band, a substrate with filter circuit structures was fabricated using the low loss dielectric material. Transmission characteristics of the filters were measured and demonstrated to have a minimum transmission loss of less than 1.18 dB at 39 GHz.","PeriodicalId":270309,"journal":{"name":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM51728.2020.9377527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
With the tremendous advances and increasing demand in 5G communications, the low-loss performance of RF device components becomes more critical. Two parameters that have significant impact on the low-loss RF performance are lower circuit conductor loss and dielectric loss of the build-up materials. Therefore, this study is focused on the loss tangent (Df) of the dielectric build-up material and demonstration of its electrical reliability with a low-loss substrate for high-frequency transmission. This newly developed advanced low-loss dry film build-up material exhibits a Dfvalues of < 0.003 at 39 GHz and is applicable to high frequency transmission. This build-up material also exhibits excellent electrical reliability required for advanced dielectric materials. For evaluation of the filter characteristics in the mm Wave band, a substrate with filter circuit structures was fabricated using the low loss dielectric material. Transmission characteristics of the filters were measured and demonstrated to have a minimum transmission loss of less than 1.18 dB at 39 GHz.