Investigation of Resonant-Cavity-Enhanced GeSn Photodetectors in Short-Wavelength Infrared Regime

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853888

Qimiao Chen, Yi-Chiau Huang, K. Lee, Wei Li, Yiding Lin, W. Loke, Bongkwon Son, C. S. Tan, Lin Zhang, Hao Zhou

引用次数: 3

Abstract

GeSn with a 10% Sn content for resonant-cavity-enhanced photodetectors (RCE PDs) was grown and the RCE PDs was designed for 2000-nm operation, exhibiting a quantum efficiency up to 91%. This work shows RCE GeSn PDs can be a promising route toward high-response SWIR detection.

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短波红外谐振腔增强GeSn光电探测器的研究

制备了Sn含量为10%的谐振腔增强光电探测器(RCE PDs)，设计用于2000 nm工作，量子效率高达91%。这项工作表明，RCE GeSn pd可以成为高响应SWIR检测的有希望的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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