Reliability investigation of SiC bipolar device module in long time inverter operation

Abstract

The reliability of SiC bipolar device modules consisting of SiC commutated gate turn-off thyristors and SiC pin diodes fabricated on a 4° off-cut SiC substrate is investigated. According to three-phase inverter operation using a Back to Back system at DC bus voltage of 2 kV and effective output power of approximately 120 kW, the SiC module could achieve the world's first successful inverter operation lasting more than 1000 hours, thereby verifying its reliability in long time inverter operation.