Scalable bipolar model for BiCMOS and bipolar circuits

Abstract

A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epilayer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement and implemented in bipolar and BiCMOS circuits.