Modelling of multicellular microwave transistors using the scaling approach

Abstract

A systematic approach to the modelling of multicellular power transistors is presented. It is based on characterisation and identification (modelling) of the elementary cell of the transistor, and modelling of input and output interconnections using the physical mask of the device. This model enables the small-signal performance of heterojunction bipolar transistors (HBT) to be predicted precisely. The obtained multicell model has been validated by comparison of its predictions with experimental measurements on various HBTs having different numbers of elementary cells.