Microsecond timescale lateral mode dynamics in a narrow stripe ingan-laser

C. Eichler, S. Schad, D. Hofstetter, W. Chow, S. Miller, A. Weimar, A. Lell, V. Harle
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引用次数: 15

Abstract

We studied the transient lateral mode behavior of a 2.25 µm wide InGaN/GaN-based laser diode. At the beginning of a 9 µs long current pulse, the diode heats up, undergoes a lateral mode transition and finally shows a beam steering due to lateral carrier diffusion.
窄条纹激光微秒级横向模动力学
我们研究了2.25µm宽InGaN/ gan基激光二极管的瞬态横向模式行为。在9µs长的电流脉冲开始时,二极管加热,经历横向模式转变,最后由于横向载流子扩散而显示出光束转向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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