1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C

D. Fendler, M. Mohrle, M. Spiegelberg, W. Rehbein, W. Passenberg, N. Grote
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引用次数: 1

Abstract

1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the μs pulse duration regime was investigated with respect to power saturation and self-heating at elevated operating currents.
1480nm InGaAsP LOC广域激光器,在20℃下脉冲输出功率>18W
开发并优化了1480nm InGaAsP大光腔广域激光二极管,用于脉冲工作,在20°C下的光输出功率为bb0 18W。此外,还研究了μs脉冲持续时间与功率饱和和高工作电流下的自热的关系。
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