Reliability Modeling of MOSFETs in Resonant Full Bridge Inverter

Abstract

This paper concerns reliability modeling of the MOSFET transistors in a full bridge inverter with series resonance at the load circuit. Taking into account the resonant process and its parameters a model concerning transistors reliability in such an inverter is obtained. The dependencies of the MOSFETs reliability on some of the resonant circuit parameters are shown in a graphical form.