Study of the Defect Distribution of Multicrystalline Silicon by 3D Visualization of Photoluminescence Signal Images

Abstract

The paper presents the research results of 3D model of internal macrostructure of a multicrystalline silicon ingot obtained by directional crystallization method using high performance multicrystalline silicon technology. The 3D model is based on digital processing of signal images of photoluminescence intensity from the surface of wafers obtained from the investigated ingot. The purpose of the paper is the experimental study of the heightwise distribution of defect cluster areas in the silicon ingot. The study of the internal multicrystalline structure and the defect distribution in the course of the ingot crystallization using classical methods requires much time and destruction of the sample along the growth direction. This is unsuitable for the manufacturing process. In this paper, the results of the analysis of the defect distribution in the direction of silicon crystal growth are presented. The 3D model construction is performed using the MATLAB software environment.