Analytical modelling of the heterojunction bipolar transistor based distributed amplifier

Abstract

In this paper we introduce a technique for modelling the distributed amplifier (DA) and in particular, the Heterojunction Bipolar Transistor (HBT) based DA. This modelling takes into account all feedback and parasitic elements associated with the HBT. Simulations of DAs based on our model and existing models are compared to those of the full DA. Results indicate that our model shows significant improvement over current models.