Photovoltaic effect in nanopore based bilayer MoS2 devices

Nam Linh Nguyen
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Abstract

In this work, we fabricated and measured a bilayer MoS2 devices based on nanopore structure. The bilayer MoS2 films were synthesized and placed on top of the nanopore. The gold metal is then evaporated and contacted to top and bottom of MoS2 film to form electrodes for electronic measurement. The asymmetric Au/MoS2/Au devices exhibit current-voltage rectification which is attributed to photovoltaic properties. The photo-response of a nanopore based bilayer MoS2 devices is investigated which shows short circuit current as well as open circuit voltage under illumination. It is also found that the photogain of devices is calculated in the range of 105 and switching behavior with light is stable and reproducible. These characteristics make atomic layered MoS2 device to be great potential for application in electronics and optoelectronics.
纳米孔双层MoS2器件的光伏效应
在这项工作中,我们制作并测量了基于纳米孔结构的双层MoS2器件。合成了双层二硫化钼薄膜,并将其置于纳米孔上。然后将金金属蒸发并与二硫化钼薄膜的顶部和底部接触,形成电子测量的电极。非对称Au/MoS2/Au器件表现出归因于光伏特性的电流-电压整流。研究了基于纳米孔的双层二硫化钼器件在光照下的光响应,该器件显示出短路电流和开路电压。结果表明,器件的光增益在105范围内,与光的开关行为稳定且可重现。这些特点使得原子层状二硫化钼器件在电子学和光电子学领域具有很大的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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