Fine line NMOS transresistance amplifiers

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156584

A. Abidi, B. Kasper, R. Kushner

引用次数: 4

Abstract

Two broadband transresistance amplifiers with bandwidths of about 700MHz, using one micron channel length NMOS devices, and incorporating a voltage controllable gain stage and a temperature tracking circuit, will be reported. One amplifier has been used as a front end for a fiber optics system operating at 800Mb/s.

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细线NMOS跨阻放大器

将报道两种带宽约为700MHz的跨电阻宽带放大器，采用一微米通道长度的NMOS器件，并结合电压可控增益级和温度跟踪电路。一个放大器已被用作光纤系统的前端，运行速度为800Mb/s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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