Silicon-based rare earth-doped materials and devices grown by MBE

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416734

P. Chow, Jian-Xin Dong, S. Zaytsev, A. Osinsky, B. Hertog

引用次数: 0

Abstract

Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They also have potential applications for planar optical communication.

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MBE制备的硅基稀土掺杂材料和器件

演示了在硅上沉积掺铒材料制备LED的方法。在1540nm波长区域有较强的红外发光。它们在平面光通信中也有潜在的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

First IEEE International Conference on Group IV Photonics, 2004.

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