III-V nanowires for optoelectronic applications

2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI:10.1109/CODEC.2012.6509261

H. Tan, N. Jiang, Y. H. Lee, D. Saxena, P. Parkinson, Q. Gao, L. Fu, C. Jagadish

引用次数: 1

Abstract

The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor deposition is described. The effect of growth conditions on the properties of the nanowires is discussed. Results nanowire solar cells and lasers are also presented.

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用于光电应用的III-V纳米线

介绍了金催化金属有机化学气相沉积法制备III-V型半导体芯壳纳米线。讨论了生长条件对纳米线性能的影响。结果介绍了纳米线太阳能电池和激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 5th International Conference on Computers and Devices for Communication (CODEC)

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