Growth Kinetics Of Photoinduced Gratings And Paramagnetic Centers In High NA, Heavily Ge-Doped Silica Optical Fibers

T. Taunay, T. Tsai, E. Friebele, P. Niay, J. Bayon
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引用次数: 3

Abstract

The achievement of UV photoinduced refractive index changes in germanosilicate fibers paved the way for the development of fiber Bragg grating (FBG) based optical devices (e.g., filters, fiber lasers, sensors). Although the mechanisms underlying the UV photosensitivity are not fully understood, it is now well established that the refractive index changes are associated with a partial bleaching of an absorption band around 5 eV, arising from the Germanium Oxygen Defect Center (GODC). Several mechanisms have been proposed to explain the photosensitivity in germanosilicate fibers: color centers [1], stress relief [2] and compaction [3]. Depending on the Ge concentration and the experimental conditions used to write the gratings, three types of photosensitivity, type 1, type IIa and type 2 have been identified in unloaded Ge-doped silica fibers. The most commonly observed, type 1, arises in standard fibers ([GeO2] < 20 mol%) under either pulsed or cw UV exposure in the low fluence regime. Type 1 photosensitivity is characterized by a monotonie increase of both the mean refractive index and the induced refractive index modulation Δnmod under UV exposure. Unlike type 1, the most relevant feature of type IIa photosensitivity ([GeO2] > 25 mol%, ϕc ≈ 2µm) is the complex behavior of and Δnmod as a function of exposure time [4]. Indeed, with increasing UV exposure time, a partial or total bleaching of the saturated type I grating is followed by the formation of a new grating spectrum. At the time of the second grating growth, the shift experienced by the Bragg grating wavelength is nulled or slightly negative, indicating a negative refractive index change. Moreover, a noticeable difference between type 1 and type IIa photosensitivities is their markedly different thermal behavior. Type 1 gratings begin to anneal at temperatures as low as 300 C and are no longer observed at 550 C while type IIa gratings experience no annealing at temperatures below 450-500 C; a rapid decay is then observed at annealing temperatures ~600-700 C. Recent experiments have shown that the formation dynamics of type 1/IIa grating spectra are strongly affected when the gratings are written in strained fibers [5]. Using the “Photoelastic densification” model and stress dependence kinetics, it has been demonstrated that, under the assumption of a decrease in densification rate, stretching the fiber will in turn decrease the type 1 index modulation [3], [6]. Nevertheless the origin of type IIa photosensitivity in high NA Ge-doped silica fibers still remains unresolved.
高NA、重锗掺杂二氧化硅光纤中光致光栅和顺磁中心的生长动力学
紫外光致折射率变化在锗硅酸盐纤维中的实现为基于光纤布拉格光栅(FBG)的光学器件(如滤波器、光纤激光器、传感器)的发展铺平了道路。虽然紫外光敏的机制尚不完全清楚,但现在已经确定折射率的变化与锗氧缺陷中心(GODC)引起的5 eV左右吸收带的部分漂白有关。人们提出了几种解释锗硅纤维光敏性的机制:色心[1]、应力消除[2]和压实[3]。根据锗浓度和写入光栅的实验条件,在未加载的掺锗硅光纤中可以识别出三种类型的光敏性,即1型,IIa型和2型。最常观察到的类型1,出现在标准纤维([GeO2] < 20 mol%)中,在脉冲或连续紫外照射下,在低通量状态下。1型光敏性的特点是在紫外照射下平均折射率和诱导折射率调制Δnmod均单调增加。与类型1不同,类型IIa光敏性([GeO2] > 25 mol%, ϕc≈2µm)的最相关特征是和Δnmod作为曝光时间[4]的函数的复杂行为。事实上,随着紫外曝光时间的增加,饱和的I型光栅的部分或全部漂白,随后形成新的光栅光谱。在第二次光栅生长时,布拉格光栅波长所经历的位移为零或略负,表明折射率呈负变化。此外,1型和IIa型光敏性的显著差异是它们的热行为明显不同。1型光栅在低至300℃的温度下开始退火,在550℃时不再观察到,而IIa型光栅在低于450-500℃的温度下没有退火;在600 ~ 700℃的退火温度下观察到快速衰减,最近的实验表明,当光栅写入应变纤维[5]时,1/IIa型光栅光谱的形成动力学受到强烈影响。利用“光弹性致密化”模型和应力依赖动力学,证明了在致密化率降低的假设下,拉伸纤维会反过来降低1型指数调制[3],[6]。然而,高钠锗掺杂二氧化硅光纤中IIa型光敏性的来源仍未得到解决。
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