Ultra-low phase noise 7.2–8.7 Ghz clip-and-restore oscillator with 191 dBc/Hz FoM

M. Babaie, A. Visweswaran, Zhuobiao He, R. Staszewski
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引用次数: 9

Abstract

In this paper we investigate benefits of a recently introduced clip-and-restore (C&R) oscillator for ultra-low phase noise RF applications and reconsider the original choices in light of further insight into the oscillator behavior. We also tackle undesired resonance frequencies and exploit them to facilitate clipping with proper choices of tuning capacitances. Based on the new theory, the proposed oscillator was implemented in 65-nm CMOS and verified to achieve 4 dB better phase noise and 1.8 dB better FoM than the original C&R oscillator, thus making it the lowest phase noise CMOS oscillator ever published. The measured phase noise is -145 dBc/Hz at a 3 MHz offset from a 4.2 GHz carrier. The resulting average FoM is 191 dBc/Hz and varies less than 2 dB across the tuning range. It covers the 7.28.7 GHz frequency band for a 19% tuning range, drawing 32 mA from a 1.3 V power supply.
超低相位噪声7.2-8.7 Ghz夹波恢复振荡器,191 dBc/Hz FoM
在本文中,我们研究了最近推出的剪切和恢复(C&R)振荡器在超低相位噪声射频应用中的好处,并根据对振荡器行为的进一步了解重新考虑了最初的选择。我们还解决了不希望的共振频率,并利用它们来促进适当选择调谐电容的裁剪。基于新理论,该振荡器在65纳米CMOS上实现,并验证了其相位噪声比原C&R振荡器高4 dB, FoM比原C&R振荡器低1.8 dB,从而使其成为迄今为止发表的相位噪声最低的CMOS振荡器。测量的相位噪声为-145 dBc/Hz,与4.2 GHz载波偏移3mhz。得到的平均FoM为191 dBc/Hz,在整个调谐范围内变化小于2 dB。它覆盖7.28.7 GHz频段,调谐范围为19%,从1.3 V电源汲取32 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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