TID Sensor Based on a Bipolar Transistor

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI:10.1109/REDW51883.2020.9325848

A. Bakerenkov, V. Pershenkov, V. Felitsyn, A. Rodin, V. Telets, V. Belyakov, A. Zhukov, N. Glukhov

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Abstract

The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.

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基于双极晶体管的TID传感器

本文研究了基于双极晶体管的总电离剂量传感器的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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