{"title":"A bandwidth enhancement technique for CMOS TIAs driven by large photodiodes","authors":"M. H. Taghavi, L. Belostotski, J. Haslett","doi":"10.1109/NEWCAS.2012.6329049","DOIUrl":null,"url":null,"abstract":"A new method of enhancing the bandwidth of a conventional series-peaked transimpedance amplifier (TIA) driven by a large photodiode is introduced. It is shown that by using N identical TIAs in parallel the circuit bandwidth can be significantly improved. The advantage of the proposed technique is in its ability to provide large bandwidth enhancements in multi-GHz frequency ranges even when photodiode capacitance is large, without a noticeable increase in TIA core circuit area. This technique is supported by a design example simulated in a 0.13μm standard CMOS technology. Simulation results show a 3dB bandwidth of 26GHz with 0.5pF photodiode capacitance, a transimpedance gain of 51dBΩ and group delay of 33.5±4ps. The proposed technique shows an overall bandwidth enhancement ratio of 3.25 with less than 0.1dB gain ripple resulting in higher bandwidth enhancement than previously reported for large photodiode capacitances.","PeriodicalId":122918,"journal":{"name":"10th IEEE International NEWCAS Conference","volume":"224 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"10th IEEE International NEWCAS Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2012.6329049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A new method of enhancing the bandwidth of a conventional series-peaked transimpedance amplifier (TIA) driven by a large photodiode is introduced. It is shown that by using N identical TIAs in parallel the circuit bandwidth can be significantly improved. The advantage of the proposed technique is in its ability to provide large bandwidth enhancements in multi-GHz frequency ranges even when photodiode capacitance is large, without a noticeable increase in TIA core circuit area. This technique is supported by a design example simulated in a 0.13μm standard CMOS technology. Simulation results show a 3dB bandwidth of 26GHz with 0.5pF photodiode capacitance, a transimpedance gain of 51dBΩ and group delay of 33.5±4ps. The proposed technique shows an overall bandwidth enhancement ratio of 3.25 with less than 0.1dB gain ripple resulting in higher bandwidth enhancement than previously reported for large photodiode capacitances.