Strain of the micro-sized cone-shape GeSi alloy film determined by Raman scattering

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-12-01 DOI:10.1109/GROUP4.2004.1416680

C. Chia, L.J. Chen, V. Mashanov, H. Cheng

引用次数: 0

Abstract

We present the micro-Raman study of curved Ge/sub x/Si/sub 1-x//Ge/sub y/Si/sub 1-y/ heterostructure, and found the strain of the curved thin layer is proportional to the curvature, i.e. inversely proportional to the diameter.

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用拉曼散射测定微尺寸锥形GeSi合金薄膜的应变

对弯曲的Ge/sub x/Si/sub 1-x//Ge/sub y/Si/sub 1-y异质结构进行了微观拉曼研究，发现弯曲薄层的应变与曲率成正比，即与直径成反比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First IEEE International Conference on Group IV Photonics, 2004.

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