{"title":"Device-Aware Test for Emerging Memories: Enabling Your Test Program for DPPB Level","authors":"Lizhou Wu, M. Fieback, M. Taouil, S. Hamdioui","doi":"10.1109/ETS48528.2020.9131559","DOIUrl":null,"url":null,"abstract":"This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.","PeriodicalId":267309,"journal":{"name":"2020 IEEE European Test Symposium (ETS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE European Test Symposium (ETS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS48528.2020.9131559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.