Light emission from erbium-doped multilayer porous silicon microcavity

Abstract

Summary form only given. There is substantial interest in obtaining light emission in silicon at wavelengths away from 750 nm porous silicon (p-Si) emission band. Erbium ions, incorporated into sponge-like structure of p-Si, can produce light emission at 1540 nm. We report for the first time light emission from a multilayer porous silicon microcavity, into which the Er-ions were doped electrochemically as luminescence centres.