Characterization of deeply etched uniform sidewall gratings in InP/InGaAsP ridge waveguides

Abstract

We report on the spectral characterization of 1st order sidewall gratings with constant period of Λ = 236 nm, which were deeply etched into InP-based passive ridge waveguides. Periodic structures of this type with variable geometry (adjustable recess depth) may be used as the mirrors with well-controlled reflectivity for laser facets and intracavity reflectors, as well as in optical pulse compressors, when grating period chirp is imposed [1].