High color rendering index white LEDs fabricated using InP/ZnS green-emitting quantum dots and InP/ZnSe/ZnS red-emitting quantum dots

Doudou Zhang, Yuxian Yan, Fan Cao, Gongli Lin, Xuyong Yang, Wanwan Li, Luqiao Yin, Jianhua Zhang
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Abstract

Quantum dots (QDs) have the advantages of spectrally adjustable, high quantum yield and narrow half-peak width, and are the most potential light-converting materials for white light that achieve high color rendering index and high saturation. The InGaN blue light chip currently used excites Ce-doped yttrium aluminum garnet (YAG: Ce3+) yellow phosphor, and the white light-emitting diode (WLED) realized exhibits color rendering index (CRI) <80 and an unsatisfactory color coordinate because of lack of red spectral components. In order to improve the CRI of white LEDs, in this paper, we fabricated InP / ZnS green-emitting QDs and InP / ZnSe / ZnS red-emitting QDs, and excited YAG: Ce3+ yellow phosphor, InP / ZnS green-emitting QDs and InP / ZnSe / ZnS redemitting QDs with blue chip , made WLED (I), and compared with WLED (II) generated by using blue LED chip to excite YAG: Ce3+ yellow phosphor. The result shows that the WLED (I) achieves a CRI of 90.3 at a driving current of 5 mA. The Commission International de L’Eclairage (CIE) chromaticity coordinates are (0.3393, 0.3342), and the correlated color temperature (CCT) is 5186K, which is high quality white light close to sunlight.
采用InP/ZnS绿色量子点和InP/ZnSe/ZnS红色量子点制备高显色指数白光led
量子点具有光谱可调、量子产率高、半峰宽度窄等优点,是实现高显色指数和高饱和度的白光最有潜力的光转换材料。目前采用的InGaN蓝光芯片激发掺ce钇铝石榴石(YAG: Ce3+)黄色荧光粉,实现的白光发光二极管(WLED)显色指数(CRI) <80,且由于缺少红色光谱成分,色坐标不理想。为了提高白光LED的显色指数,本文制作了InP / ZnS绿色发光量子点和InP / ZnSe / ZnS红色发光量子点,用蓝芯片激发YAG: Ce3+黄色荧光粉、InP / ZnS绿色发光量子点和InP / ZnSe / ZnS赎回量子点,制成了WLED (I),并与用蓝色LED芯片激发YAG: Ce3+黄色荧光粉生成的WLED (II)进行了比较。结果表明,在5ma的驱动电流下,WLED (I)的显色指数达到90.3。国际照明委员会(CIE)色度坐标为(0.3393,0.3342),相关色温(CCT)为5186K,是接近太阳光的高质量白光。
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