A common power-stage cellular/PCS/W-CDMA triple-band MMIC power amplifier

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings Pub Date : 2003-09-08 DOI:10.1109/RAWCON.2003.1227948

K. Kim, J. H. Kim, Y. Noh, C. Park

引用次数: 2

Abstract

This paper describes the design and experimental results of an InGaP/GaAs hetero-junction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier for cellular (850 MHz)/PCS(1750 MHz)/W-CDMA (1950 MHz) triple-band mobile terminal applications. This two-stage power amplifier has only one power-stage in common for the triple bands to achieve a small chip and module size for low manufacturing cost. In order to reduce quiescent current for cellular band, the band selecting circuit to control bias current is used to the power-stage amplifier. This power amplifier has the power gain of 30 dB (26 dB, 25 dB) for cellular (PCS, W-CDMA) band and power-added efficiency (PAE) of 43% at the output of 28 dBm for cellular band under 3.4 V operation voltage.

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一种常用的功率级蜂窝/PCS/W-CDMA三频段MMIC功率放大器

介绍了一种用于蜂窝(850 MHz)/PCS(1750 MHz)/W-CDMA (1950 MHz)三波段移动终端应用的InGaP/GaAs异质结双极晶体管(HBT)单片微波集成电路(MMIC)功率放大器的设计和实验结果。这种两级功率放大器只有一个功率级，用于三频段，以实现小芯片和模块尺寸，以降低制造成本。为了减小蜂窝带的静态电流，在功率级放大器中采用了控制偏置电流的选带电路。该功率放大器在蜂窝(PCS, W-CDMA)频段的功率增益为30 dB (26 dB, 25 dB)，在3.4 V工作电压下，蜂窝频段28 dBm输出时的功率附加效率(PAE)为43%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings

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