Si/SiGe terahertz quantum cascade emitters

Abstract

In this paper, we demonstrated electroluminescence in strain-symmetrised structures with up to 600 active periods. The wafer also demonstrates for the first time growth of a strain symmetrised Si/SiGe superlattice on top of a silicon-on-silicide wafer where the silicide is designed to be a bottom reflector in waveguide cavity. TEM images of the structure demonstrated excellent planarity and uniformity of the active periods.