On the neural approach for FET small-signal modelling up to 50GHz

Abstract

The aim of this paper is to discuss and compare two neural approaches applied in small-signal modelling of microwave FETs. One of them is completely based on artificial neural networks, while the other is a hybrid model putting together artificial neural networks and an equivalent circuit representation of a microwave transistor. Devices with different gate width are considered in this paper. Different modelling aspects are compared, with special emphasis on the model development procedure and model accuracy.