III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628229

F. Ren, M. Hong, J. Kuo, W. Hobson, J. Lothian, H. Tsai, J. Lin, J. Mannaerts, J. Kwo, S. Chu, Y. Chen, A. Cho

引用次数: 3

Abstract

We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.

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采用Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)作为栅极电介质的III-V型化合物半导体mosfet

本文报道了一种采用Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)作为栅极绝缘体的III-V基金属氧化物半导体场效应晶体管(MOSFET)技术。展示了增强型p沟道和n沟道、耗尽型n沟道GaAs mosfet，以及增强型n沟道In/sub 0.53/Ga/sub 0.47/As mosfet。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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