A 53 to 84 GHz CMOS power amplifier with 10.8-dBm output power and 31 GHz 3-dB bandwidth

Abstract

A 53-to-84 GHz wideband power amplifier (PA) is implemented in 65-nm GP CMOS technology. This PA exhibits a measured small signal gain of 29.1 ± 1.5 dB from 53 to 84 GHz and a Psat of 10.8 dBm, P1dB of 7.2 dBm, power added efficiency (PAE) of 9.7% at 80 GHz at drain voltage of 1.2 V. The DC consumption is 123 mW.