Optically controlled phase-shifter based on gaps on microstrip line

Abstract

An optically controlled phase-shifter has been designed taking benefit of high resistive silicon photo-absorption at 843 nm. Phase-shift of 85/spl deg/ has been achieved in the frequency range 18 GHz-28 GHz under very low optical power while the magnitude remains practically constant. Physical and electromagnetic modelling has been performed to explain optically controlled microwave effects in these microstrip structures.