Short-cavity 1.55 /spl mu/m DBR lasers integrated with high-speed EAM modulators

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382727

C. Wang, E. Skogen, J. Raring, G. Morrison, L. Coldren

引用次数: 4

Abstract

Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.

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短腔1.55 /spl mu/m DBR激光器集成高速EAM调制器

利用量子阱混合处理平台，设计并制备了集成EAMs的短腔InGaAsP/InP DBR激光器。实现了高达25 GHz的射频带宽，并在10 Gbit/s的速度下观察到>10 dB的动态消光。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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