A SOI current memory for analog signal processing at high temperature

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819837

L. Portmann, M. Declercq

引用次数: 1

Abstract

This paper describes a current memory cell integrated in a fully depleted SOI process. The circuit was designed to maintain its performance up to 225/spl deg/C. An application of the memory is demonstrated by measurements of a current doubler for an A/D converter.

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用于高温模拟信号处理的SOI电流存储器

本文描述了一种集成在完全耗尽SOI进程中的电流存储单元。电路的设计使其性能保持在225/spl度/C。通过测量a /D转换器的电流倍频器，演示了该存储器的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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