Modeling and simulation of injection dynamics for quantum dot based single-photon sources

Abstract

Single semiconductor quantum dots embedded in p-i-n diodes have been demonstrated to operate as electrically driven single-photon sources. By means of numerical simulations one can explore the limitations in the carrier injection dynamics and further improve the device technology. We propose a comprehensive modeling approach coupling the macroscopic transport of bulk carriers with an open quantum system to describe the essential physics of such devices on multiple scales.