Design of tri-band ENZ SIW sensor for microwave testing of materials in 3G and 4G GSM bands

Abhishek Kumar Jha, M. Akhtar
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引用次数: 2

Abstract

This paper presents a novel tri-band epsilon-near-zero (ENZ) substrate integrated waveguide (SIW) based microwave sensor for microwave material testing at global system for mobile communications (GSM) bands. The prototype RF sensor is designed, simulated, and tested for the microwave characterization of materials in 3G and 4G frequency bands. The proposed design provides a substantial reduction in the sensor size, and facilitates complex permittivity measurement at multiple frequencies with reasonable sensitivity as compared to the conventional SIW based sensors. The device is fabricated using multiple layers of FR4 substrate, and the RF signal is coupled using SMA connectors which is then tested for various reference samples. The measured data are found to be in good agreement with their reference values thus validating the proposed design methodology.
用于3G和4G GSM频段材料微波测试的三波段ENZ SIW传感器设计
本文提出了一种新型的三波段epsilon-近零(ENZ)衬底集成波导(SIW)微波传感器,用于全球移动通信系统(GSM)频段的微波材料测试。设计、模拟和测试了原型射频传感器,用于3G和4G频段材料的微波特性。与传统的基于SIW的传感器相比,所提出的设计大大减小了传感器的尺寸,并且便于在多个频率下以合理的灵敏度进行复杂的介电常数测量。该器件使用多层FR4衬底制造,RF信号使用SMA连接器耦合,然后对各种参考样品进行测试。测量数据被发现与他们的参考值很好地一致,从而验证了所提出的设计方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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