The effects of depletion layer recombination in polycrystalline photovoltaic devices under illumination

Abstract

The flux method has been used to simulate the effect of depletion layer and grain boundary recombination on the performance of polycrystalline semiconductor photovoltaic devices under solar illumination. Results are presented for a polycrystalline n/sup +/-p silicon homojunction solar cell, and an n/sup +/-p CdS/CuInSe/sub 2/ heterojunction solar cell.