THz Generation Control in Fe/X Spintronic Multilayers by chemical bonding at epitaxial Fe/GaAs(001) interfaces

R. Adam, Genyu Chen, D. Bürgler, D. Cao, S. Heidtfeld, D. Chakraborty, Jing Cheng, I. Komissarov, H. Hardtdegen, M. Mikulics, C. Schneider, R. Sobolewski
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Abstract

We report an additional degree of control of THz transients in Fe/X spintronic emitters grown on GaAs(001). We ascribe the field-independent enhancement of the THz amplitude to specific chemical bonding at the epitaxial Fe/GaAs(001) interface.
外延Fe/GaAs(001)界面化学键控制Fe/X自旋电子多层中太赫兹的产生
我们报告了在GaAs上生长的Fe/X自旋电子发射体中对太赫兹瞬态的额外控制程度(001)。我们将太赫兹振幅的场无关增强归因于外延Fe/GaAs(001)界面上的特定化学键合。
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