Efficient Wideband Diode Mixer for k-Band Applications

Abstract

In this work, an efficient k-band diode mixer was designed in TSMC CMOS 180 nm technology. It works in the frequency range of 17-28 GHz with a conversion loss of 7.5 dB for an IF frequency of 3 GHz and a local oscillator power of 15 dBm. It exhibits an isolation better than 30 dB between the input LO and RF ports and the IF output port. Furthermore, the proposed mixer shows low conversion loss particularly for high IF frequencies.