Gate Driver Circuit for a 15-inch AMOLED Display with Narrow Border

2021 IEEE 4th International Conference on Electronics Technology (ICET) Pub Date : 2021-05-07 DOI:10.1109/ICET51757.2021.9451041

Yangyang Xue, Kai Liu, Longjie Wang, Yu Zhang, Yuzhi Zheng, Zhiruo Chen, Jia Hu, X. Wang

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Abstract

Top-gate thin-film transistors (TFTs) has been proposed and introduced to fabricate active-matrix organic light-emitting diode (AMOLED) displays with large size and high resolution. The electrical characteristics, uniformity and photostability of the top-gate TFTs have been studied systematically. Experimental results show that the Ion/Ioff ratio reaches 107, indicating good switching characteristic. Meanwhile, the threshold voltage (Vth) over the whole AMOLED display changes from -0.5V to 0.7V, demonstrating good uniformity TFT process. A novel circuit design technology for gate driver on array (GOA) circuits integrating with top-gate TFTs has been proposed. In contrast to traditional GOA circuit, each GOA stage proposed in the work can export two shift register pulses. By using this technology, narrow border in AMOLED display can be obtained. The performance and the stabilization of GOA circuit has been systematically studied. Finally, this GOA circuit is placed in a 15-inch AMOLED display to testify the function.

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窄边框15英寸AMOLED显示器的栅极驱动电路

提出并引入顶栅薄膜晶体管(TFTs)来制作大尺寸、高分辨率有源矩阵有机发光二极管(AMOLED)显示器。系统地研究了顶栅晶体管的电学特性、均匀性和光稳定性。实验结果表明，离子/开关比达到107，具有良好的开关特性。同时，整个AMOLED显示屏的阈值电压(Vth)从-0.5V变化到0.7V，表明TFT工艺均匀性好。提出了一种与顶门tft集成的栅极阵列驱动电路设计新技术。与传统的GOA电路相比，本文提出的每个GOA级可以输出两个移位寄存器脉冲。利用该技术可以实现AMOLED显示器的窄边框。系统地研究了GOA电路的性能和稳定性。最后，将该GOA电路放置在15英寸AMOLED显示器中以验证其功能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2021 IEEE 4th International Conference on Electronics Technology (ICET)

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