A Novel RC-Triggered Bidirectional ESD Protection Circuit in SOI Technology

Abstract

In this paper, a novel RC-triggered bidirectional ESD protection circuit in SOI technology is proposed and demonstrated. In the proposed circuit, the improved bridge rectifier circuit is formed by diode rectifier circuit paralleling MOSFET rectifier circuit. The circuit can convert the input voltage in I/O pin ranging between negative and positive values into a single polarity input voltage to the RC-triggered circuit. From the simulation results, the novel circuit can provide efficient bidirectional ESD protection for the I/O pin.