Effect of substrate temperature on cathodoluminescence of ITO thin films prepared by spray pyrolysis

A. Kachouane, N. Fellahi, M. Addou, M. A. Lamrani, T. El Habbani, Z. Sofiani, M. El Jouad, K. Bahedi, L. Dghoughi, B. Sahraoui, N. Gaumer, A. Monteil
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引用次数: 1

Abstract

Highly conducting and transparent tin-doped indium oxide (ITO) thin films were deposited on glass substrates by spray pyrolysis. The characterisation of ITO thin films prepared under different deposition parameters is investigated. The transmission, resistivity and luminescence of the films were found to be strongly dependent on these parameters. The films prepared at the optimum conditions exhibit low resistivity and optical transmission larger than 90% in the visible region. ITO cathodoluminescence films prepared at 450degC and 500degC has been studied. These samples exhibit a strong luminescence peaks in visible region at 460 nm and 650 nm.
衬底温度对喷雾热解制备ITO薄膜阴极发光性能的影响
采用喷雾热解法在玻璃衬底上制备了高导电性、高透明性的掺锡氧化铟(ITO)薄膜。研究了不同沉积参数下制备的ITO薄膜的性能。薄膜的透射率、电阻率和发光性能与这些参数密切相关。在最佳条件下制备的薄膜具有低电阻率和大于90%的可见光区透光率。研究了在450℃和500℃条件下制备的ITO阴极发光膜。这些样品在460 nm和650 nm的可见光区表现出强烈的发光峰。
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