S. Srivastava, S. R. Panchal, D. Gandhi, P. Bharadhwaj, Surinder Singh
{"title":"Circuit level paralleling of devices using two-way DC block for efficient power combining","authors":"S. Srivastava, S. R. Panchal, D. Gandhi, P. Bharadhwaj, Surinder Singh","doi":"10.1109/IMARC.2015.7411419","DOIUrl":null,"url":null,"abstract":"This paper presents a novel means for paralleling transistors at circuit level for combining power using a Microstrip coupled line based \"two-way DC block\". This approach offers several features in a single elegant structure, such as: power division, impedance matching between an arbitrary source and loads, inherent DC blocking capability and convenient post-production tuning where necessary. The implemented amplifier achieves the above mentioned functionalities with 17.5 dB of gain in 200 MHz bandwidth and 30dBm of output power at 50% output drain efficiency at Ku band.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2015.7411419","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a novel means for paralleling transistors at circuit level for combining power using a Microstrip coupled line based "two-way DC block". This approach offers several features in a single elegant structure, such as: power division, impedance matching between an arbitrary source and loads, inherent DC blocking capability and convenient post-production tuning where necessary. The implemented amplifier achieves the above mentioned functionalities with 17.5 dB of gain in 200 MHz bandwidth and 30dBm of output power at 50% output drain efficiency at Ku band.