Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

Abstract

Non-destructive ion irradiation experiments and corresponding device simulations were performed in order to investigate the radiation sensitivity of different device structures. We modeled an irradiation experiment in which a high power diode is exposed to /sup 84/Kr, /sup 28/Si, and /sup 12/C-ions in order to validate and calibrate the simulation models. Device simulations reveal spatial and temporal distributions of electric field and carrier densities occurring in the interior of the device. Therefore, they help to identify and explain the mechanism of strong charge multiplication induced by incident ions.