Surface morphological and electrical characterization of silicon nanowires (SiNWs) by conventional photolithography method

Abstract

Recently, the outcome of SiNWs had been greatly anticipated because of the remarkable properties including for biomolecules detection. SiNWs had been developed with size reduction lithography to form silicon wires as the final device sensor. The results of the sensor are analyzed to determine surface morphological and electrical behavior of the silicon wires. The relationship between value of the current is directly proportional to voltage values. SiNWs also been tested with metallic presence such as GNPs to detect the electrical measurement. In the future, SiNWs can be used as the repeatability, stability and high bio-compatibility for biomolecules detection such as proteins, RNA, DNA and antibodies.